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BC856BS Datasheet(PDF) 7 Page - NXP Semiconductors |
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BC856BS Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BC856BS_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 11 August 2009 7 of 12 NXP Semiconductors BC856BS 65 V, 100 mA PNP/PNP general-purpose transistor IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE = −5 V; Tamb =25 °C Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Per transistor: Transition frequency as a function of collector current; typical values f = 1 MHz; Tamb =25 °C f = 1 MHz; Tamb =25 °C Fig 9. Per transistor: Collector capacitance as a function of collector-base voltage; typical values Fig 10. Per transistor: Emitter capacitance as a function of emitter-base voltage; typical values 006aaa543 −1 −10−1 −10 VCEsat (V) −10−2 IC (mA) −10−1 −103 −102 −1 −10 (1) (2) (3) IC (mA) −1 −102 −10 006aaa545 102 103 fT (MHz) 10 VCB (V) 0 −10 −8 −4 −6 −2 006aab623 4 6 2 8 10 Cc (pF) 0 006aaa547 VEB (V) 0 −6 −4 −2 9 11 7 13 15 Ce (pF) 5 |
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