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ZNBR6001Q20 Datasheet(PDF) 5 Page - Zetex Semiconductors |
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ZNBR6001Q20 Datasheet(HTML) 5 Page - Zetex Semiconductors |
5 / 10 page FUNCTIONAL DIAGRAM FUNCTIONAL DESCRIPTION The ZNBR devices provide all the bias requirements for external FETs, including the generation of the negative supply required for gate biasing, from the single supply voltage. The diagram above shows a single stage from the ZNBR series. The ZNBR4000/1 contains 4 such stages, the ZNBR6000/1 contains 6. The negative rail generator is common to all devices. The drain voltage of the external FET QN is set by the ZNBR device to its normal operating voltage. This is determined by the on board VD Set reference, for the ZNBR4000/6000 this is nominally 2.2 volts whilst the ZNBR4001/6001 provides nominally 2 volts. The drain current taken by the FET is monitored by the low value resistor ID Sense. The amplifier driving the gate of the FET adjusts the gate voltage of QN so that the drain current taken matches the current called for by an external resistor RCAL. Both ZNBR devices have the facility to program different drain currents into selected FETs. Two RCAL inputs are provided. For the ZNBR4000, resistor RCAL1 sets the drain current of FETs 1 and 2, resistor RCAL2 sets the drain current of FETs 3 and 4. For the ZNBR6000, resistor RCAL1 sets the drain current of FETs 1 and 4, resistor RCAL2 sets the drain current of FETs 2, 3, 5 and 6. Since the FET is a depletion mode transistor, it is usually necessary to drive its gate negative with respect to ground to obtain the required drain current. To provide this capability powered from a single positive supply, the device includes a low current negative supply generator. This generator uses an internal oscillator and two external capacitors, CNB and CSUB. ZNBR4000 ZNBR4000 ZNBR4001 ZNBR6000 ZNBR6001 5 |
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Similar Description - ZNBR6001Q20 |
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