BLF6G22-180RN_22LS-180RN_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 20 November 2008

4 of 11

NXP Semiconductors

BLF6G22(LS)-180RN

Power LDMOS transistor

7.2 One-tone CW

7.3 Two-tone CW

Fig 1.

One-tone CW power gain and drain efficiency as function of load power;

typical values

0

180

120

60

001aai641

15

16

17

(dB)

14

20

40

60

(%)

0

Fig 2.

Two-tone CW power gain and drain efficiency

as function of peak envelope load power;

typical values

Fig 3.

Two-tone CW intermodulation distortion as a

function of peak envelope load power; typical

values

0

180

120

60

001aai642

15

16

17

(dB)

14

20

40

60

(%)

0

0

100

80

40

60

20

001aai643

−50

−40

−60

−30

−20

IMD

(dBc)

−70

IMD3

IMD5

IMD7