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BLF6G22LS-75 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLF6G22LS-75
Description  Power LDMOS transistor
Download  11 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BLF6G22LS-75 Datasheet(HTML) 3 Page - NXP Semiconductors

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BLF6G22LS-75_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 14 April 2010
3 of 11
NXP Semiconductors
BLF6G22LS-75
Power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF6G22LS-75 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq =690 mA; PL = 75 W (CW); f = 2170 MHz.
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID = 0.5 mA
65
--V
VGS(th)
gate-source threshold voltage
VDS =10 V; ID = 100 mA
1.4
2
2.4
V
VGSq
gate-source quiescent voltage
VDS =28 V; ID = 690 mA
1.75
2.16
2.75
V
IDSS
drain leakage current
VGS =0V; VDS = 28 V
--3
μA
IDSX
drain cut-off current
VGS =VGS(th) +3.75 V;
VDS =10V
14.9
18.7
-
A
IGSS
gate leakage current
VGS =11V; VDS = 0 V
-
-
300
nA
gfs
forward transconductance
VDS =10V; ID =5A
-
7.3
-
S
RDS(on)
drain-source on-state
resistance
VGS =VGS(th) + 3.75 V;
ID =3.5 A
-
0.14
0.24
Ω
Crs
feedback capacitance
VGS =0V; VDS =28V;
f= 1MHz
-1.5
-pF
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 690 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 17 W
17.6
18.7
-
dB
IRL
input return loss
PL(AV) = 17 W
-
−9.5
−6.5
dB
η
D
drain efficiency
PL(AV) = 17 W
28
30.5
-
%
IMD3
third order intermodulation distortion
PL(AV) = 17 W
-
−37.5 −34
dBc
ACPR
adjacent channel power ratio
PL(AV) = 17 W
-
−41.5 −38.5 dBc


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