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BLF6G22LS-100 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLF6G22LS-100 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. 1.2 Features and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 = −37 dBc ACPR = −41 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp η D IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 2-carrier W-CDMA 2110 to 2170 28 25 18.2 29 −37[1] −41[1] CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. |
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