BLF6G22LS-130 datasheet(6/11 Pages) NXP

Part #	BLF6G22LS-130

Description	Power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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6 / 11 page

BLF6G22LS-130_1

Product data sheet

Rev. 01 — 23 May 2008

6 of 11

NXP Semiconductors

BLF6G22LS-130

Power LDMOS transistor

7.4 2-carrier W-CDMA

VDS = 28 V; IDq = 1100 mA; f1 = 2157.5 MHz;

f2 = 2167.5 MHz; carrier spacing 10 MHz.

VDS = 28 V; IDq = 1100 mA; f1 = 2169.95 MHz;

f2 = 2170.05 MHz.

Fig 5.

2-carrier W-CDMA power gain and drain

efﬁciency as functions of average load power;

typical values

Fig 6.

2-carrier W-CDMA adjacent channel leakage

ratio and IMD3 as functions of average load

power; typical values

PL (W)

050

40

20

30

10

001aai098

17

15

19

21

Gp

(dB)

13

20

10

30

40

ηD

(%)

0

Gp

ηD

PL(AV) (W)

040

30

10

20

001aai102

−40

−60

−20

0

ACPR,

IMD3

(dBc)

−80

IMD3

ACPR

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BLF6G22LS-130 Datasheet(PDF) 6 Page - NXP Semiconductors

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