BLF6G38-10_BLF6G38-10G_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 3 February 2009

6 of 15

NXP Semiconductors

BLF6G38-10; BLF6G38-10G

WiMAX power LDMOS transistor

7.3 Single carrier NA IS-95 broadband performance at 2 W average

7.3.1 Graphs

PAR = 9.7 dB at 0.01 % probability.

PAR = 9.7 dB at 0.01 % probability.

(1) Low frequency component

(2) High frequency component

Fig 4.

Power gain and drain efficiency as function of

frequency; typical values

Fig 5.

Adjacent channel power ratio as a function of

frequency; typical values

f (MHz)

3400

3600

3550

3450

3500

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14

16

12

18

20

(dB)

(%)

10

20

21

19

22

23

18

f (MHz)

3400

3600

3560

3480

3520

3440

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−60

−50

−40

ACPR

(dBc)

−70

(2)

(1)

(1)

(2)

(2)

(1)

single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz.

single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz; IBW = 30 kHz.

(1) Low frequency component

(2) High frequency component

Fig 6.

Power gain and drain efficiency as function of

load power; typical values

Fig 7.

Adjacent channel power ratio as a function of

load power; typical values

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14

16

12

18

20

(dB)

(%)

10

20

30

10

40

50

0

10

1

10

1

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−55

−65

−45

−35

ACPR

(dBc)

−75

(2)

(1)

(1)

(2)

(1)

(2)