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BLF6G38-10G Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF6G38-10G Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page BLF6G38-10_BLF6G38-10G_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 February 2009 6 of 15 NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs VDS =28V; IDq = 130 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values Fig 5. Adjacent channel power ratio as a function of frequency; typical values f (MHz) 3400 3600 3550 3450 3500 001aaj365 14 16 12 18 20 Gp (dB) ηD (%) 10 20 21 19 22 23 18 ηD Gp f (MHz) 3400 3600 3560 3480 3520 3440 001aaj366 −60 −50 −40 ACPR (dBc) −70 ACPR885k ACPR1500k ACPR1980k (2) (1) (1) (2) (2) (1) VDS =28V; IDq = 130 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. VDS = 28 V; IDq = 130 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values Fig 7. Adjacent channel power ratio as a function of load power; typical values 001aaj367 14 16 12 18 20 Gp (dB) ηD (%) 10 20 30 10 40 50 0 PL(AV) (W) 10−1 10 1 ηD Gp PL(AV) (W) 10−1 10 1 001aaj368 −55 −65 −45 −35 ACPR (dBc) −75 ACPR855k ACPR1500k ACPR1980k (2) (1) (1) (2) (1) (2) |
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