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CSD16322Q5C Datasheet(PDF) 1 Page - Texas Instruments |
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CSD16322Q5C Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 10 page  S G S S S D D D D D D D D S G S S Gate Source BottomView Drain TopView Qg − GateCharge − nC 0 1 4 7 0 2 4 6 8 10 12 G003 3 2 5 6 8 9 10 ID =20A V =12.5V DS 14 VGS − GatetoSourceVoltage − V 0 1 3 5 9 10 11 12 0 3 4 7 8 9 10 G006 5 6 1 2 ID =20A TC =125 C ° TC =25 C ° 8 7 6 4 2 CSD16322Q5C www.ti.com SLPS241A – DECEMBER 2009 – REVISED JANUARY 2010 DualCool™ N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16322Q5C 1 FEATURES PRODUCT SUMMARY 2 • DualCool™ Package SON 5×6mm VDS Drain to Source Voltage 25 V • Optimized for Two Sided Cooling Qg Gate Charge Total (4.5V) 6.8 nC • Optimized for 5V Gate Drive Qgd Gate Charge Gate to Drain 1.3 nC • Ultralow Qg and Qgd VGS = 3V 5.4 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V 4.6 m Ω • Low Thermal Resistance VGS = 8V 3.9 m Ω • Avalanche Rated VGS(th) Threshold Voltage 1.1 V • Pb Free Terminal Plating • RoHS Compliant and Halogen Free spacer ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • Point-of-Load Synchronous Buck in SON 5x6-mm Plastic 13-Inch Tape and CSD16322Q5C 2500 Package Reel Reel Networking, Telecom and Computing Systems • Optimized for Synchronous or Control FET Applications spacer ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 25 V The NexFET™ power MOSFET has been designed VGS Gate to Source Voltage +10 / –8 V to minimize losses in power conversion applications Continuous Drain Current, TC = 25°C 97 A and optimized for 5V gate drive applications. ID Continuous Drain Current(1) 21 A IDM Pulsed Drain Current, TA = 25°C (2) 136 A PD Power Dissipation(1) 3.1 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 125 mJ ID = 50A, L = 0.1mH, RG = 25Ω (1) RqJA = 39°C/W on 1-inch 2 Cu, (2-oz.) on a 0.06" thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% RDS(on) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 DualCool, NexFET are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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