BLF6G38LS-100 datasheet(3/12 Pages) NXP

Part #	BLF6G38LS-100

Description	WiMAX power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF6G38-100_6G38LS-100_1

Product data sheet

Rev. 01 — 11 November 2008

3 of 12

NXP Semiconductors

BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

7.

Application information

[1]

Measured within 30 kHz bandwidth.

7.1 Ruggedness in class-AB operation

The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch

corresponding to VSWR = 10 : 1 through all phases under the following conditions:

VDS = 28 V; IDq = 1050 mA; PL = PL(1dB); f = 3600 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Type

Typ

Unit

Rth(j-case)

thermal resistance from junction to case

Tcase =80 °C; PL(AV) = 18.5 W BLF6G38-100

0.58

K/W

BLF6G38LS-100

0.43

K/W

Table 6.

Characteristics

Tj = 25 °C per section; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS

drain-source breakdown voltage

VGS =0V; ID = 0.6 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 180 mA

1.4

2

2.4

V

IDSS

drain leakage current

VGS =0V; VDS =28V

-

5

µA

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V; VDS = 10 V

26.5

33

-

A

IGSS

gate leakage current

VGS = +11 V; VDS = 0 V

-

450

nA

gfs

forward transconductance

VDS = 10 V; ID = 6.3 A

-

12

-

S

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V; ID = 6.3 A

-

0.09

0.15

Ω

Crs

feedback capacitance

VGS =0 V; VDS = 28 V; f = 1 MHz

-

2.6

-

pF

Table 7.

Application information

Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 trafﬁc channels (Walsh codes

8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz;

f3 = 3600 MHz; RF performance at VDS =28V; IDq = 1050 mA; Tcase =25 °C; unless otherwise speciﬁed, in a class-AB

production circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

PL(AV) = 18.5 W

110

130

-

W

Gp

power gain

PL(AV) = 18.5 W

11.5

13

-

dB

RLin

input return loss

PL(AV) = 18.5 W

-

−10

-

dB

ηD

drain efﬁciency

PL(AV) = 18.5 W

18.5

21.5

-

%

ACPR885k

adjacent channel power ratio (885 kHz)

PL(AV) = 18.5 W

[1] -

−47.5 −45

dBc

ACPR1980k

adjacent channel power ratio (1980 kHz)

PL(AV) = 18.5 W

[1] -

−65

−63

dBc

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