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BUK7C10-75AITE Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK7C10-75AITE Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page BUK7C10-75AITE_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 17 February 2009 4 of 15 NXP Semiconductors BUK7C10-75AITE N-channel TrenchPLUS standard level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tmb (°C) 0 200 150 50 100 03na19 40 80 120 Pder (%) 0 03ni93 0 40 80 120 0 50 100 150 200 ID (A) Capped at 75 A due to package Tmb (°C) 03ni94 1 10 102 103 1 10 102 103 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS/ID 1 ms Capped at 75 A due to package tp = 10 μs 100 μs |
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