BUK7L06-34ARC

N-channel TrenchPLUS standard level FET

Rev. 05 — 17 February 2009

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include internal gate resistors and

TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Reduced component count due to

integrated gate resistor

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

[1]

Current is limited by power dissipation chip rating.

[2]

Refer to document 9397 750 12572 for further information.

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain current

see Figure 1; see Figure 3

[1]

[2]

-

-

147

A

total power

dissipation

-

-

250

W

Static characteristics

drain-source

on-state resistance

see Figure 14

-5.1

6

m

Ω