BUK7Y07-30B datasheet(1/14 Pages) NXP

Part #	BUK7Y07-30B

Description	N-channel TrenchMOS standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK7Y07-30B

N-channel TrenchMOS standard level FET

Rev. 03 — 7 April 2010

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V Loads

Automotive systems

General purpose power switch

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source

voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

--30

V

ID

drain current

VGS =10V; Tmb =25°C;

see Figure 1; see Figure 4

[1]

--75

A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

--105

W

Static characteristics

RDSon

drain-source

on-state

resistance

VGS =10V; ID =25A;

Tj =25°C; see Figure 12;

see Figure 13

-

57m

Ω

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =75A; Vsup ≤ 30 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

--198

mJ

Dynamic characteristics

QGD

gate-drain charge

ID =25A; VDS =24 V;

VGS = 10 V; see Figure 14

-10.7

-

nC

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