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BUK9Y07-30B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK9Y07-30B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page BUK9Y07-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 2 of 14 NXP Semiconductors BUK9Y07-30B N-channel TrenchMOS logic level FET [1] Continuous current is limited by package. 2. Pinning information 3. Ordering information EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 30 V; RGS =50 Ω; VGS =5V; Tj(init) = 25 °C; unclamped --198 mJ Dynamic characteristics QGD gate-drain charge VGS =5V; ID =25A; VDS =24 V; see Figure 14 -12.4 -nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source SOT669 (LFPAK) 2S source 3S source 4 G gate mb D mounting base; connected to drain mb 1234 S1 S2 S3 D G mbl798 Table 3. Ordering information Type number Package Name Description Version BUK9Y07-30B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 |
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