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BUK9Y19-75B Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK9Y19-75B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK9Y19-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 13 April 2010 9 of 14 NXP Semiconductors BUK9Y19-75B N-channel TrenchMOS logic level FET Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 16. Source current as a function of source-drain voltage; typical values 003aad099 0 1 2 3 4 5 010 20 30 QG (nC) VGS (V) VDS = 44 V VDS = 14 V 003aad098 10 10 2 10 3 10 4 10 -1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aad094 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1 1.2 VSD (V) IS (A) Tj = 25 °C Tj = 175 °C |
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