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BUK7675-100A Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7675-100A Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BUK7675-100A_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 31 July 2009 7 of 13 NXP Semiconductors BUK7675-100A N-channel TrenchMOS standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values 03nb31 0 10 20 30 40 50 60 02 46 8 10 VDS (V) ID (A) 10 9 8 VGS (V) = 4.5 5.5 6.5 7.5 20 03nb30 50 55 60 65 70 75 80 85 90 510 15 20 VGS (V) RDSon (m Ω) 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 03nb28 0 5 10 15 20 0 1020 3040 ID (A) gfs (S) |
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