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BUK7905-40AI Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7905-40AI Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BUK7905-40AI_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 February 2009 7 of 14 NXP Semiconductors BUK7905-40AI N-channel TrenchPLUS standard level FET Source-drain diode VSD source-drain voltage IS =40A; VGS =0V; Tj = 25 °C; see Figure 17 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =30V; Tj =25°C -96 - ns Qr recovered charge - 224 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 03ni86 0 100 200 300 400 024 68 10 VDS (V) ID (A) 4 4.5 5 5.5 6 6.5 7 7.5 8 10 20 Label is VGS (V) 03ni88 0 4 8 12 4 8 12 16 20 VGS (V) RDSon (m Ω) 03ni87 0 5 10 15 20 0 100 200 300 400 ID (A) RDSon (m Ω) VGS = 5.5 V 6 V 6.5 V 7 V 8 V 10 V 20 V Tj (°C) −60 180 120 060 03ni30 0.8 1.2 0.4 1.6 2.0 a 0 |
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