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BUK9620-100B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9620-100B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BUK9620-100B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 6 May 2009 6 of 12 NXP Semiconductors BUK9620-100B N-channel TrenchMOS logic level FET Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 13 - 0.86 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =30V; Tj =25°C -80 - ns Qr recovered charge - 272 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Fig 5. Sub-threshold drain current as a function of gate-source voltage Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values. Fig 8. Forward transconductance as a function of drain current; typical values. 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 VGS (V) ID (A) max typ min 003a a c771 0 30 60 90 120 150 01 23 45 VDS (V) ID (A) 3.4 3.2 4.5 3 2.7 2.5 10 VGS (V) = 003a a c772 12 16 20 24 28 246 8 10 VGS (V) RDSon (m Ω) 003a a c774 0 40 80 120 160 0 30 60 90 120 ID (A) gfs (S ) |
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