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BUK9907-55ATE Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9907-55ATE Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page BUK9907-55ATE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 February 2009 6 of 15 NXP Semiconductors BUK9907-55ATE N-channel TrenchPLUS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj =25°C 55 - - V ID =0.25mA; VGS =0V; Tj =-55 °C 50 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS = VGS; Tj =25°C; see Figure 9 11.5 2 V ID =1mA; VDS = VGS; Tj = 175 °C; see Figure 9 0.5 - - V ID =1mA; VDS = VGS; Tj =-55 °C; see Figure 9 --2.3 V IDSS drain leakage current VDS =55V; VGS =0V; Tj =25°C - 0.1 10 µA VDS =55V; VGS =0V; Tj = 175 °C - - 250 µA V(BR)GSS gate-source breakdown voltage IG =-1mA; -55 °C < Tj < 175 °C 12 15 - V IG = 1 mA; -55 °C < Tj < 175 °C 12 15 - V IGSS gate leakage current VDS =0V; VGS =5V; Tj =25°C - 5 1000 nA VDS =0V; VGS =-5V; Tj =25°C - 5 1000 nA RDSon drain-source on-state resistance VGS =5V; ID =50A; Tj =25°C; see Figure 7; see Figure 8 -5.8 7 m Ω VGS =5V; ID =50A; Tj =175 °C; see Figure 7; see Figure 8 --14 m Ω VGS =4.5 V; ID =50A; Tj =25°C - 6 7.7 m Ω VGS =10V; ID =50A; Tj =25°C - 5.2 6.2 m Ω VF(TSD) temperature sense diode forward voltage IF = 250 µA; Tj = 25 °C 648 658 668 mV SF(TSD) temperature sense diode temperature coefficient IF = 250 µA; Tj >-55 °C; Tj < 175 °C -1.4 -1.54 -1.68 mV/K VF(TSD)hys temperature sense diode forward voltage hysteresis IF > 125 µA; IF < 250 µA; Tj =25°C 25 32 50 mV Dynamic characteristics QG(tot) total gate charge ID =50A; VDS =44V; VGS =5V; Tj =25°C; see Figure 14 - 108 - nC QGS gate-source charge - 15 - nC QGD gate-drain charge - 47 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 12 - 5836 - pF Coss output capacitance - 958 - pF Crss reverse transfer capacitance - 595 - pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V; RG(ext) =10 Ω; Tj =25 °C -51 - ns tr rise time - 202 - ns td(off) turn-off delay time - 341 - ns tf fall time - 207 - ns |
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