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GTL2002 Datasheet(PDF) 9 Page - NXP Semiconductors |
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GTL2002 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 22 page GTL2002_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 2 July 2009 9 of 22 NXP Semiconductors GTL2002 2-bit bidirectional low voltage translator 11. Static characteristics [1] All typical values are measured at Tamb =25 °C. [2] Cio(on) maximum of 30 pF and Cio(off) maximum of 15 pF is guaranteed by design. [3] Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals. Table 9. Static characteristics Tamb = −40 °C to +85 °C, unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit VOL LOW-level output voltage VDD = 3.0 V; VSREF = 1.365 V; VSn or VDn = 0.175 V; Iclamp = 15.2 mA - 260 350 mV VIK input clamping voltage II = −18 mA; VGREF =0V - - −1.2 V ILI(gate) gate input leakage current VI =5V; VGREF = 0 V --5 µA Cig input capacitance at gate pin GREF; VI = 3 V or 0 V - 19.4 - pF Cio(off) off-state input/output capacitance VO = 3 V or 0 V; VGREF =0V [2] - 7.4 - pF Cio(on) on-state input/output capacitance VO = 3 V or 0 V; VGREF =3V [2] - 18.6 - pF Ron ON-state resistance VI =0V; IO =64mA [3] VGREF = 4.5 V - 3.5 5 Ω VGREF = 3 V - 4.4 7 Ω VGREF = 2.3 V - 5.5 9 Ω VGREF = 1.5 V - 67 105 Ω VI =0V; IO = 30 mA; VGREF = 1.5 V [3] -9 15 Ω VI = 2.4 V; IO =15mA; VGREF = 4.5 V [3] -7 10 Ω VI = 2.4 V; IO =15mA; VGREF =3V [3] -58 80 Ω VI = 1.7 V; IO =15mA; VGREF = 2.3 V [3] -50 70 Ω |
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