Electronic Components Datasheet Search |
|
TAS5612PHDR Datasheet(PDF) 9 Page - Texas Instruments |
|
|
TAS5612PHDR Datasheet(HTML) 9 Page - Texas Instruments |
9 / 26 page TAS5612A www.ti.com SLAS710 – JUNE 2010 AUDIO CHARACTERISTICS (PBTL) Audio performance is recorded as a chipset consisting of a TAS5518 PWM Processor (modulation index limited to 97.7%) and a TAS5612A power stage. PCB and system configurations are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 32.5V, GVDD_X = 12V, RL = 2Ω, fS = 384kHz, ROC = 30kΩ, TC = 75°C, Output Filter: LDEM = 7mH, CDEM = 1mF, MODE = 101-00, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RL = 2Ω, 10%, THD+N 250 RL = 3Ω, 10% THD+N 165 RL = 4Ω, 10% THD+N 125 PO Power output per channel W RL = 2Ω, 1% THD+N 210 RL = 3Ω, 1% THD+N 135 RL = 4Ω, 1% THD+N 105 THD+N Total harmonic distortion + noise 1 W 0.03% Vn Output integrated noise A-weighted, TAS5518 Modulator 120 mV SNR Signal to noise ratio(1) A-weighted, TAS5518 Modulator 103 dB A-weighted, input level –60 dBFS using DNR Dynamic range 103 dB TAS5518 modulator Pidle Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching (2) 1.7 W (1) SNR is calculated relative to 1% THD-N output level. (2) Actual system idle losses are affected by core losses of output inductors. ELECTRICAL CHARACTERISTICS PVDD_X = 32.5V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 384kHz, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION Voltage regulator, only used as reference VREG VDD = 12V 3 3.3 3.6 V node, VREG VI_CM Analog comparator reference node, VI_CM 1.5 1.75 1.9 V Operating, 50% duty cycle 20 IVDD VDD supply current mA Idle, reset mode 20 50% duty cycle 10 IGVDD_x Gate-supply current per half-bridge mA Reset mode 1.5 50% duty cycle without output filter or 15 mA load IPVDD_x Half-bridge idle current Reset mode, No switching 540 mA OUTPUT-STAGE MOSFETs Drain-to-source resistance, low side (LS) TJ = 25°C, excludes metallization 60 100 m Ω resistance, RDS(on) Drain-to-source resistance, high side (HS) 60 100 m Ω GVDD = 12V Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Link(s): TAS5612A |
Similar Part No. - TAS5612PHDR |
|
Similar Description - TAS5612PHDR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |