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STM8S207RBT6BTR Datasheet(PDF) 76 Page - STMicroelectronics |
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STM8S207RBT6BTR Datasheet(HTML) 76 Page - STMicroelectronics |
76 / 103 page Electrical characteristics STM8S207xx, STM8S208xx 76/103 Doc ID 14733 Rev 9 Figure 32. Typ. VDD - VOH @ VDD = 3.3 V (high sink ports) 10.3.7 Reset pin characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. Figure 33. Typical NRST VIL and VIH vs VDD @ 4 temperatures 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 02 46 8 10 12 14 -40˚C 25˚C 85˚C 125˚C IOL [mA] Table 41. NRST pin characteristics Symbol Parameter Conditions Min Typ 1) Max Unit VIL(NRST) NRST Input low level voltage (1) -0.3 V 0.3 x VDD V VIH(NRST) NRST Input high level voltage (1) 0.7 x VDD VDD + 0.3 VOL(NRST) NRST Output low level voltage (1) IOL= 2 mA 0.5 RPU(NRST) NRST Pull-up resistor (2) 30 40 60 k Ω tIFP(NRST) NRST Input filtered pulse (3) 75 ns tINFP(NRST) NRST Input not filtered pulse (3) 500 ns tOP(NRST) NRST output pulse (1) 15 µs 1. Data based on characterization results, not tested in production. 2. The RPU pull-up equivalent resistor is based on a resistive transistor 3. Data guaranteed by design, not tested in production. 0 1 2 3 4 5 6 2.5 3 3.5 4 4.5 5 5.5 6 -40˚C 25˚C 85˚C 125˚C VDD [V] |
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