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STM8S207RBT6CTR Datasheet(PDF) 69 Page - STMicroelectronics

Part # STM8S207RBT6CTR
Description  Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I짼C, CAN
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S207RBT6CTR Datasheet(HTML) 69 Page - STMicroelectronics

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STM8S207xx, STM8S208xx
Electrical characteristics
Doc ID 14733 Rev 9
69/103
10.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 125 °C.
Table 35.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1.
Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max
(2)
2.
Refer to Table 19 on page 57 for the value of VIT-max.
V
Table 36.
Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1.
Data based on characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU 24 MHz
2.95
5.5
V
tprog
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
66.6
ms
Fast programming time for 1 block
(128 bytes)
33.3
ms
terase
Erase time for 1 block (128 bytes)
3
3.3
ms
NRW
Erase/write cycles(2)
(program memory)
2.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA = 85 °C
10 k
cycles
Erase/write cycles (data memory)(2)
TA = 125 ° C
300 k
1M
tRET
Data retention (program memory)
after 10 k erase/write cycles at
TA = 85 °C
TRET = 55° C
20
years
Data retention (data memory) after 10
k erase/write cycles at TA = 85 °C
TRET = 55° C
20
Data retention (data memory) after
300k erase/write cycles at
TA = 125 °C
TRET = 85° C
1
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
2mA


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