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STM8S207RBT6CTR Datasheet(PDF) 69 Page - STMicroelectronics |
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STM8S207RBT6CTR Datasheet(HTML) 69 Page - STMicroelectronics |
69 / 103 page STM8S207xx, STM8S208xx Electrical characteristics Doc ID 14733 Rev 9 69/103 10.3.5 Memory characteristics RAM and hardware registers Flash program memory/data EEPROM memory General conditions: TA = -40 to 125 °C. Table 35. RAM and hardware registers Symbol Parameter Conditions Min Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design, not tested in production. Halt mode (or reset) VIT-max (2) 2. Refer to Table 19 on page 57 for the value of VIT-max. V Table 36. Flash program memory/data EEPROM memory Symbol Parameter Conditions Min(1) 1. Data based on characterization results, not tested in production. Typ Max Unit VDD Operating voltage (all modes, execution/write/erase) fCPU ≤ 24 MHz 2.95 5.5 V tprog Standard programming time (including erase) for byte/word/block (1 byte/4 bytes/128 bytes) 66.6 ms Fast programming time for 1 block (128 bytes) 33.3 ms terase Erase time for 1 block (128 bytes) 3 3.3 ms NRW Erase/write cycles(2) (program memory) 2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. TA = 85 °C 10 k cycles Erase/write cycles (data memory)(2) TA = 125 ° C 300 k 1M tRET Data retention (program memory) after 10 k erase/write cycles at TA = 85 °C TRET = 55° C 20 years Data retention (data memory) after 10 k erase/write cycles at TA = 85 °C TRET = 55° C 20 Data retention (data memory) after 300k erase/write cycles at TA = 125 °C TRET = 85° C 1 IDD Supply current (Flash programming or erasing for 1 to 128 bytes) 2mA |
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