STM8S207RBT6CTR datasheet(70/103 Pages) STMICROELECTRONICS

Part #	STM8S207RBT6CTR

Description	Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I짼C, CAN

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70 / 103 page

Electrical characteristics

STM8S207xx, STM8S208xx

70/103

Doc ID 14733 Rev 9

10.3.6

I/O port pin characteristics

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All

unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or

an external pull-up or pull-down resistor.

Table 37.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level

voltage

VDD = 5 V

-0.3

0.3 x VDD

V

VIH

Input high level

voltage

0.7 x VDD

VDD + 0.3 V

V

Vhys

Hysteresis(1)

700

mV

Rpu

Pull-up resistor

VDD = 5 V, VIN = VSS

30

45

60

k

Ω

tR, tF

Rise and fall time

(10% - 90%)

Fast I/Os

Load = 50 pF

20 (2)

ns

Standard and high sink I/Os

Load = 50 pF

125 (2)

ns

Ilkg

Input leakage

current,

analog and digital

VSS

≤ V

IN

≤ V

DD

±1

µA

Ilkg ana

Analog input

leakage current

VSS

≤ V

IN

≤ V

DD

±250 (2)

nA

Ilkg(inj)

Leakage current in

adjacent I/O(2)

Injection current ±4 mA

±1(2)

µA

1.

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production.

2.

Data based on characterization results, not tested in production.

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