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ZVN2110G Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZVN2110G Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page ZVN2110G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED PARTMARKING DETAIL - ZVN2110 COMPLEMENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 500 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 2W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 2.4 V I D =1mA, VDS= VGS Gate-Body Leakage IGSS 0.1 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) 1.5 2 AVDS=25V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 4 Ω VGS=10V, ID=1A Forward Transconductance (1)(2) gfs 250 350 mS VDS=25V, ID=1A Input Capacitance (2) Ciss 59 75 pF Common Source Output Capacitance (2) Coss 16 25 pF VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 4 8pF Turn-On Delay Time (2)(3) td(on) 4 7ns VDD ≈25V, ID=1A Rise Time (2)(3) tr 4 8ns Turn-Off Delay Time (2)(3) td(off) 8 13 ns Fall Time (2)(3) tf 8 13 ns DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Diode Forward Voltage (1) VSD 0.82 VIS=0.32A, VGS=0 Reverse Recovery Time TRR 112 ns IF=0.32A, VGS=0, IR=0.1A (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator ZVN2110G D D S G TYPICAL CHARACTERISTICS Output Characteristics VDS - Drain Source Voltage (Volts) Transfer Characteristics 2 468 10 020 40 60 80 100 Saturation Characteristics Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) 0 2 4 6810 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 VDS=10V 0 10 6 2 4 8 0 2 468 10 ID= 1A 500mA 100mA Normalised RDS(on) and VGS(th) v Temperature Tj-Junction Temperature (°C) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 Drai n- So urce Re sis ta nc e R DS( on ) Gate Threshold Voltage VGS(TH ) ID=1 A VGS=10V ID=1mA VGS=VDS 180 0 0.8 0.4 1.2 2.0 1.6 8V 9V 7V 5V 4V 6V 3V 5V 4V 8V 6V 9V 7V VGS= 0 0.8 0.4 1.2 2.0 1.6 On-resistance v gate-source voltage VGS-Gate Source Voltage (Volts) 1 10 100 500mA ID= 1A 100mA 1 10 5 VGS= 10V 3V 10V VDS=25V 3 - 388 3 - 387 |
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