ZVN2110G datasheet(1/3 Pages) ZETEX

Part #	ZVN2110G

Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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Manufacturer	ZETEX [Zetex Semiconductors]

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ZVN2110G

SOT223 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – OCTOBER 1995

7

FEATURES

*

6A PULSE DRAIN CURRENT

*

FAST SWITCHING SPEED

PARTMARKING DETAIL -

ZVN2110

COMPLEMENTARY TYPE -

ZVP2110G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

100

V

Continuous Drain Current at Tamb=25°C

ID

500

mA

Pulsed Drain Current

IDM

6A

Gate Source Voltage

VGS

± 20

V

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

CONDITIONS.

Drain-Source Breakdown Voltage

BVDSS

100

V

ID=1mA, VGS=0V

Gate-Source Threshold Voltage

VGS(th)

0.8

2.4

V

I

D

=1mA, VDS= VGS

Gate-Body Leakage

IGSS

0.1

20

nA

VGS=± 20V, VDS=0V

Zero Gate Voltage Drain Current

IDSS

1

100

µA

VDS=100V, VGS=0

VDS=80V, VGS=0V, T=125°C(2)

On-State Drain Current(1)

ID(on)

1.5

2

AVDS=25V, VGS=10V

Static Drain-Source On-State

Resistance (1)

RDS(on)

4

Ω

VGS=10V, ID=1A

Forward Transconductance (1)(2)

gfs

250

350

mS

VDS=25V, ID=1A

Input Capacitance (2)

Ciss

59

75

pF

Common Source Output

Capacitance (2)

Coss

16

25

pF

VDS=25 V, VGS=0V, f=1MHz

Reverse Transfer Capacitance (2)

Crss

4

8pF

Turn-On Delay Time (2)(3)

td(on)

4

7ns

VDD ≈25V, ID=1A

Rise Time (2)(3)

tr

4

8ns

Turn-Off Delay Time (2)(3)

td(off)

8

13

ns

Fall Time (2)(3)

tf

8

13

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

CONDITIONS.

Diode Forward Voltage (1)

VSD

0.82

VIS=0.32A, VGS=0

Reverse Recovery Time

TRR

112

ns

IF=0.32A, VGS=0, IR=0.1A

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

ZVN2110G

D

S

G

TYPICAL CHARACTERISTICS

Output Characteristics

VDS - Drain Source Voltage (Volts)

Transfer Characteristics

2

468

10

020

40

60

80

100

Saturation Characteristics

Voltage Saturation Characteristics

VGS-Gate Source Voltage (Volts)

VDS - Drain Source Voltage (Volts)

0

2

4

6810

2.8

2.4

1.6

0.4

0

0.8

2.0

1.2

VDS=10V

0

10

6

2

4

8

0

2

468

10

ID=

1A

500mA

100mA

Normalised RDS(on) and VGS(th) v Temperature

Tj-Junction Temperature (°C)

-40 -20

0

20 40 60 80

120

100

140 160

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.6

0.8

Drai

n-

So

urce

Re

sis

ta

nc

e R

DS(

on

)

Gate Threshold Voltage VGS(TH

)

ID=1 A

VGS=10V

ID=1mA

VGS=VDS

180

0

0.8

0.4

1.2

2.0

1.6

8V

9V

7V

5V

4V

6V

3V

5V

4V

8V

6V

9V

7V

VGS=

0

0.8

0.4

1.2

2.0

1.6

On-resistance v gate-source voltage

VGS-Gate Source Voltage (Volts)

1

10

100

500mA

ID=

1A

100mA

1

10

5

VGS=

10V

3V

10V

VDS=25V

3 - 388

3 - 387

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