2003 Oct 15

2

NXP Semiconductors

Product data sheet

PNP/PNP resistor-equipped transistors;

R1 = 22 k

Ω, R2 = 22 kΩ

PEMB1; PUMB1

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• Low current peripheral drivers

• Replacement of general purpose transistors in digital

applications.

DESCRIPTION

PNP/PNP resistor-equipped transistors (see “Simplified

outline, symbol and pinning” for package details).

QUICK REFERENCE DATA

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

−50

V

output current (DC)

−

−100

mA

TR1

PNP

−

−

−

TR2

PNP

−

−

−

R1

bias resistor

22

−

k

Ω

R2

bias resistor

22

−

k

Ω

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER

PACKAGE

MARKING CODE

NPN/PNP

COMPLEMENT

NPN/NPN

COMPLEMENT

PHILIPS

EIAJ

PEMB1

SOT666

−

Z4

PEMD2

PEMH1

PUMB1

SOT363

SC-88

B*3(1)

PUMD2

PUMH1

TYPE NUMBER

SIMPLIFIED OUTLINE AND SYMBOL

PINNING

PIN

DESCRIPTION

PEMB1

1

emitter TR1

PUMB1

2

base TR1

3

collector TR2

4

emitter TR2

5

base TR2

6

collector TR1

MAM477

12

3

4

6

5

Top view

65

4

12

3

R2

TR1

TR2

R1

R1

R2