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ZVN4310A Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVN4310A Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 3 page N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt V DS *R DS(on) = 0.5Ω * Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 0.9 A Practical Continuous Drain Current at Tamb=25°C IDP 1A Pulsed Drain Current IDM 12 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 850 mW Practical Power Dissipation at Tamb=25°C* Ptotp 1.13 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 1 3 V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 100 µA µA VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) 9A VDS=25 V, VGS=10V Static Drain-Source On-State Resistance (1) RDS(on) 0.36 0.48 0.5 0.65 Ω Ω VGS=10V,ID=3A VGS=5V, ID=1.5A Forward Transconductance (1)(2) gfs 600 mS VDS=25V,ID=3A E-Line TO92 Compatible ZVN4310A 3-393 D G S ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Input Capacitance (2) Ciss 350 pF Common Source Output Capacitance (2) Coss 140 pF VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 30 pF Turn-On Delay Time (2)(3) td(on) 8ns VDD ≈25V, VGEN=10V, ID=3A RGS=50Ω Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) td(off) 30 ns Fall Time (2)(3) tf 16 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient Junction to Case R th(j-amb) R th(j-case) 150 50 °C/W °C/W ZVN4310A -40 0.50 0.25 0.0001 50 150 100 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 1.0 0.75 -20 0 20 40 60 80 100 120 200 180 160 140 t1 tP D=t1/tP D.C. D=0.6 D=0.2 D=0.1 Single Pulse 0.001 0 D=0.05 3-394 |
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