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ZVN4424C Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZVN4424C Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 4 page ZVN4424A/C ZVN4424A/C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 240 V ID=1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.81.3 1.8V ID=1mA, VDS= VGS Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V Zero Gate Voltage Drain Current IDSS 10 100 µA µA VDS=240 V, VGS=0 VDS=190 V, VGS=0V, T=125°C On-State Drain Current ID(on) 0.8 1.4 A VDS=10 V, VGS=10V Static Drain-Source On-State Resistance RDS(on) 4 4.3 5.5 6 Ω Ω VGS=10V,ID=500mA VGS=2.5V,ID=100mA Forward Transconductance (1) (2) gfs 0.4 0.75 S VDS=10V,ID=0.5A Input Capacitance (2) Ciss 110 200 pF VDS=25V, VGS=0V, f=1MHz Common Source Output Capacitance (2) Coss 15 25 pF Reverse Transfer Capacitance (2) Crss 3.5 15 pF Turn-On Delay Time (2)(3) td(on) 2.5 5 ns VDD ≈50V, ID =0.25A, VGEN=10V Rise Time (2)(3) tr 58 ns Turn-Off Delay Time (2)(3) td(off) 40 60 ns Fall Time (2)(3) tf 16 25 ns (1)*Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤2% (2)Sample Test (3) Switching times measured with 50 Ω source impedance and >5ns rise time on pulse generator |
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