ISSUE 1 - MARCH 2001

ZVN4525G

2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DSS

250

V

Gate Source Voltage

V

GS

±40

V

Continuous Drain Current (V

(V

I

D

I

D

310

248

mA

mA

Pulsed Drain Current (c)

I

DM

1.44

A

Continuous Source Current (Body Diode)

I

S

1.1

A

Pulsed Source Current (Body Diode)

I

SM

1.44

A

Power Dissipation at T

Linear Derating Factor

P

D

2

16

W

mW/°C

Operating and Storage Temperature Range

T

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

63

°C/W

Junction to Ambient (b)

26

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

NB High Voltage Applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to

voltage spacing between conductors.