PEMD4 datasheet(4/8 Pages) NXP

Part #	PEMD4

Description	NPN/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = open

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

2003 Oct 10

4

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 10 k

Ω, R2 = open

PEMD4; PUMD4

THERMAL CHARACTERISTICS

Notes

1.

Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

2.

Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth j-a

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT666

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0

−

100

nA

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0

−

1

μA

VCE = 30 V; IB = 0; Tj = 150 °C

−

50

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

100

nA

hFE

DC current gain

VCE = 5 V; IC = 1 mA

200

−

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

150

mV

R1

input resistor

7

10

13

k

Ω

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

TR1 (NPN)

−

2.5

pF

TR2 (PNP)

−

3

pF

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