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PESD1CAN Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD1CAN Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PESD1CAN_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 15 February 2008 4 of 12 NXP Semiconductors PESD1CAN CAN bus ESD protection diode 6. Characteristics [1] ∆C d is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3. [2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [3] Measured from pin 1 to 3 or 2 to 3. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 24 V IRM reverse leakage current VRWM =24V - < 1 50 nA VBR breakdown voltage IR = 5 mA 25.4 27.8 30.3 V Cd diode capacitance f = 1 MHz; VR = 0 V - 1117pF ∆Cd/Cd diode capacitance matching [1] f = 1 MHz; VR =0V - 0.1 - % f = 1 MHz; VR = 2.5 V - 0.1 - % VCL clamping voltage [2][3] IPP = 1 A --40 V IPP = 3 A --70 V rdif differential resistance IR = 1 mA - - 300 Ω |
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