PMD9001D datasheet(8/15 Pages) NXP

Part #	PMD9001D

Description	MOSFET driver

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Manufacturer	NXP [NXP Semiconductors]

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8 / 15 page

PMD9001D_1

Product data sheet

Rev. 01 — 16 November 2006

8 of 15

NXP Semiconductors

PMD9001D

MOSFET driver

VCE =5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

IC/IB =20

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −40 °C

Fig 5.

TR1: DC current gain as a function of collector

current; typical values

Fig 6.

TR1: Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

VCE =5V

(1) Tamb = −40 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 7.

TR1: On-state input voltage as a function of

collector current; typical values

Fig 8.

TR1: Off-state input voltage as a function of

collector current; typical values

IC (mA)

10−1

102

10

1

006aaa015

102

10

103

hFE

1

(3)

(2)

(1)

IC (mA)

1102

10

006aaa014

102

103

VCEsat

(mV)

10

(1)

(3)

(2)

IC (mA)

10−1

102

10

1

006aaa016

10

1

102

VI(on)

(V)

10−1

(1)

(3)

(2)

006aaa017

IC (mA)

10−2

10

1

10−1

1

10

VI(off)

(V)

10−1

(1)

(2)

(3)

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