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PMEG1020EV Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PMEG1020EV
Description  Ultra low VF MEGA Schottky barrier rectifier
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMEG1020EV Datasheet(HTML) 2 Page - NXP Semiconductors

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2003 Jul 15
2
NXP Semiconductors
Product data sheet
Ultra low VF MEGA Schottky barrier
rectifier
PMEG1020EV
FEATURES
• Forward current: 2 A
• Reverse voltage: 10 V
• Ultra low forward voltage
• Ultra small plastic SMD package.
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection encapsulated in a SOT666 ultra small
plastic SMD package.
PINNING
PIN
DESCRIPTION
1
cathode
2
cathode
3
anode
4
anode
5
cathode
6
cathode
handbook, halfpage
12
3
4
5
6
1, 2
5, 6
3, 4
MHC310
Fig.1 Simplified outline (SOT666) and symbol.
Marking code: F2.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Only valid if pins 3 and 4 are connected in parallel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
10
V
IF
continuous forward current
Tsp ≤ 55 °C; note 1
2
A
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 1
3.2
A
IFSM
non-repetitive peak forward current
tp = 8 ms square wave; note 1
9
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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