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PMEG2010ER Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMEG2010ER Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page PMEG2010ER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 29 December 2008 2 of 13 NXP Semiconductors PMEG2010ER 1 A low VF MEGA Schottky barrier rectifier 2. Pinning information [1] The marking bar indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 2 1 sym001 12 Table 3. Ordering information Type number Package Name Description Version PMEG2010ER - plastic surface-mounted package; 2 leads SOD123W Table 4. Marking codes Type number Marking code PMEG2010ER B5 Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj =25 °C - 20 V IF(AV) average forward current square wave; δ = 0.5; f=20kHz Tamb ≤ 130 °C [1] -1 A Tsp ≤ 145 °C- 1 A IFSM non-repetitive peak forward current square wave; tp =8ms [2] -50 A Ptot total power dissipation Tamb ≤ 25 °C [3][4] - 0.57 W [3][5] - 0.95 W [3][1] - 1.8 W |
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