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TPC8A07-H Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TPC8A07-H Datasheet(HTML) 6 Page - Toshiba Semiconductor |
6 / 12 page TPC8A07-H 2009-07-21 6 Q1 10 30 0 0 4 8 12 0 VDD = 6 V VDS 6 9 15 3 12 24 20 12 2.0 0 0 40 80 120 1.5 160 1.0 0.5 2.5 1.5 0.5 0 −80 0 40 80 120 160 −40 2.0 1.0 10000 1000 1 0.1 100 10 Ciss Coss Crss 100 10 10 4.5 VGS = 0 V 3 −0.2 0 −1.2 −0.6 −0.4 −0.8 100 10 1 1 −1.0 0 40 16 −40 −80 160 0 40 80 120 VGS = 4.5 V VGS = 10 V 8 24 ID = 1.7, 3.4, 6.8 A 32 ID = 1.7, 3.4, 6.8 A Ambient temperature Ta (°C) Dynamic input/output characteristics Total gate charge Qg (nC) Ambient temperature Ta (°C) RDS (ON) − Ta Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance − VDS Vth − Ta Common source Pulse test Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = 10 V ID = 1 mA Pulse test Common source ID = 6.8 A Ta = 25°C Pulse test Ambient temperature Ta (°C) PD – Ta Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (1) (2) (3) (4) |
Similar Part No. - TPC8A07-H |
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Similar Description - TPC8A07-H |
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