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TPCC8103 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCC8103 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 7 page  TPCC8103 2010-01-14 5 −10 −20 0 0 40 VDD = −6 V VDS −24 −12 16 −4 0 8 −8 −12 −30 32 24 0 −0.5 −1.5 −80 −40 0 40 80 120 160 −2.5 −1.0 −2.0 10 −0.1 100 1000 10000 −1 −10 −100 Ciss Coss Crss 0 −0.1 0.2 −100 0.6 0.8 VGS = 0 V −10 −4.5 −3 0.4 −10 −1 1.0 −1 160 −40 0 40 80 120 −80 12 0 VGS = −10 V VGS = −4 V 30 24 ID = −4.5, −9, −18 A ID = −18 A 18 6 −4.5, −9 A Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) IDR – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) RDS (ON) – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = −10 V ID = −1 mA Pulse test Common source Pulse test Common source ID = −18 A Ta = 25°C Pulse test VDD = −24 V −12 −6 |
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