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TEA1610T Datasheet(PDF) 1 Page - NXP Semiconductors |
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TEA1610T Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 21 page 1. General description The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers. The circuit is very flexible and enables a broad range of applications for different mains voltages. 2. Features TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 Product data sheet Fig 1. Basic configuration mgu336 TEA1610 HALF- BRIDGE CIRCUIT RESONANT CONVERTER MOSFET SWITCH bridge voltage supply (high side) VHS VDD power ground signal ground I Integrated high voltage level-shift function I Transconductance error amplifier for ultra high-ohmic regulation feedback I Integrated high voltage bootstrap diode I Latched shut-down circuit for overcurrent and overvoltage protection I Low start-up current (green function) I Adjustable minimum and maximum frequencies I Adjustable dead time I Undervoltage lockout |
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Similar Description - TEA1610T |
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