2SK1382

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

2

−π−MOSIII)

2SK1382

Relay Drive, Motor Drive and DC−DC Converter

Applications

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

100

V

100

V

Gate−source voltage

±20

V

DC

(Note 1)

60

Drain current

Pulse (Note 1)

240

A

Drain power dissipation (Tc = 25°C)

200

W

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.625

°C / W

Thermal resistance, channel to

ambient

35.7

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-21F1B

Weight: 9.75 g (typ.)