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2SK3373 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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2SK3373 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3373 2010-04-13 5 rth − tw Safe operating area EAS − Tch Pulse width tw (s) Channel temperature (initial) Tch (°C) −15 V 15 V Test circuit Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 48.4 mH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS 0.01 0.1 1 3 0.3 0.03 10 μ 100 μ 1 m 10 m 100 m 1 T PDM t Duty = t/T Rth (ch-c) = 6.25°C/W Duty = 0.5 0.2 0.1 Single Pulse 0.05 0.02 0.01 10 Drain-source voltage VDS (V) 0 25 40 80 120 200 160 50 75 100 125 150 00.1 1 0.1 1 10 30 10 100 1000 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) ID max (pulsed) * 100 μs * DC operation Tc = 25°C 1 ms * VDSS max 3 00.3 0.3 ID max (pulsed) * |
Similar Part No. - 2SK3373_10 |
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Similar Description - 2SK3373_10 |
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