BC847A datasheet(1/4 Pages) ZOWIE

Part #	BC847A

Description	GENERAL PURPOSE TRANSISTOR NPN SILICON

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Manufacturer	ZOWIE [Zowie Technology Corporation]

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Zowie Technology Corporation

General Purpose Transistor

NPN Silicon

BC847A,B,C

1

2

1

2

3

SOT-23

Rating

Symbol

Value

Unit

Characteristic

Collector-Emitter Voltage

VCEO

45

Vdc

Collector-Base Voltage

VCBO

50

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Collector Current-Continuous

IC

100

mAdc

Characteristic

Symbol

Max.

Unit

Total Device Dissipation FR-5 Board

(1) TA=25

o

C

Derate above 25

o

C

PD

225

1.8

mW

mW /

oC

Total Device Dissipation Alumina Substrate,

(2) TA=25

o

C

Derate above 25

o

C

PD

300

2.4

mW

mW /

oC

Thermal Resistance Junction to Ambient

556

oC / W

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

DEVICE MARKING

ELECTRICAL CHARACTERISTICS (TA=25

o

C unless otherwise noted)

OFF CHARACTERISTICS

R JA

Thermal Resistance Junction to Ambient

417

oC / W

R JA

Junction and Storage Temperature

Collector-Emitter Breakdowe Voltage

( IC=10 uA, VEB=0 )

Collector-Base Breakdowe Voltage

( IC=10 uA )

Collector-Emitter Breakdowe Voltage

( IC=10mA )

Emitter-Base Breakdowe Voltage

( IE=1.0 uA )

Symbol

V(BR)CES

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

Min.

50

45

50

6.0

-

Max.

-

15

5.0

Typ.

-

Unit

Vdc

nAdc

uAdc

Collector Cutoff Current

( VCB=30 V )

( VCB=30 V, TA = 150

oC )

BC847A=1E; BC847B=1F; BC847C=1G

-55 to +150

oC

TJ,TSTG

Zowie Technology Corporation

REV. : 0

EMITTER

BASE

COLLECTOR

(1) FR-5=1.0 x 0.75 x 0.062in.

(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.

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