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TPCA8021-H Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCA8021-H Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCA8021-H 2006-01-17 1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8021-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 6.9nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.) • High forward transfer admittance: |Yfs| =46 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 27 Drain current Pulsed (Note 1) IDP 81 A Drain power dissipation (Tc=25℃) PD 45 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single-pulse avalanche energy (Note 3) EAS 95 mJ Avalanche current IAR 27 A Repetitive avalanche energy (Tc=25℃) (Note 4) EAR 2.7 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.5± 0.1 1.27 0.4±0.1 0.595 0.05 M A 1 4 5 8 0.15±0.05 0.8±0.1 1.1±0.2 4.25±0.2 1 4 5 8 5.0±0.2 0.95±0.05 S 0.05 S A 0.166±0.05 JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN |
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