TPCA8022-H datasheet(5/7 Pages) TOSHIBA

Part #	TPCA8022-H

Description	Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCA8022-H

2007-02-09

5

Drain-source voltage VDS (V)

Capacitance – VDS

Drain-source voltage VDS (V)

IDR – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

RDS (ON) – Ta

Total gate charge Qg (nC)

Dynamic input/output

characteristics

0

0.1

−0.2

10

100

−0.6

−0.8

−1.0

VGS = 0 V

10

4.5

1

3

−0.4

1

Common source

Ta

= 25°C

Pulse test

10

0.1

100

1000

10000

1

10

100

Ciss

Coss

Crss

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

160

0

1.5

3.0

6.0

−80

−40

0

40

80

120

4.5

Common source

VDS = 10 V

ID = 1 mA

Pulse test

40

20

10

0

100

40

20

60

80

0

10

30

VDD = 20 V

VDS

80

40

20

8

4

12

16

0

Common source

ID = 22 A

Ta

= 25°C

Pulse test

160

−40

0

40

80

120

−80

50

30

VGS = 10 V

ID = 5.5A,11A

Common source

Pulse test

22A

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TPCA8022-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

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