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TPCA8022-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPCA8022-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCA8022-H 2007-02-09 5 Drain-source voltage VDS (V) Capacitance – VDS Drain-source voltage VDS (V) IDR – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) RDS (ON) – Ta Total gate charge Qg (nC) Dynamic input/output characteristics 0 0.1 −0.2 10 100 −0.6 −0.8 −1.0 VGS = 0 V 10 4.5 1 3 −0.4 1 Common source Ta = 25°C Pulse test 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 160 0 1.5 3.0 6.0 −80 −40 0 40 80 120 4.5 Common source VDS = 10 V ID = 1 mA Pulse test 40 20 10 0 100 40 20 60 80 0 0 10 30 VDD = 20 V VDS 80 40 40 20 20 8 4 12 16 0 Common source ID = 22 A Ta = 25°C Pulse test 160 −40 0 40 80 120 −80 50 30 VGS = 10 V ID = 5.5A,11A Common source Pulse test 22A |
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