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TPCA8010-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8010-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8010-H 2009-12-21 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 200 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 200 ⎯ ⎯ ID = 10 mA, VGS = −5 V 200 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 150 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 2.7 A ⎯ 0.38 0.45 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.7 A 1.8 3.9 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 220 ⎯ pF Rise time tr ⎯ 8 ⎯ Turn-ON time ton ⎯ 17 ⎯ Fall time tf ⎯ 13 ⎯ Switching time Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 70 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge Qgs ⎯ 7.6 ⎯ Gate-drain (“miller”) charge Qgd ⎯ 2.4 ⎯ Gate switch charge Qsw VDD ≈ 160 V, VGS = 10 V, ID = 5.5 A ⎯ 3.7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 11 A Forward voltage (diode) VDSF IDR = 5.5 A, VGS = 0 V ⎯ ⎯ −2.0 V VDD ≈ 100 V 0 V VGS 10 V ID = 2.7 A VOUT |
Similar Part No. - TPCA8010-H_09 |
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Similar Description - TPCA8010-H_09 |
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