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TPCA8010-H Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # TPCA8010-H
Description  High-Speed Switching Applications
Download  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8010-H Datasheet(HTML) 3 Page - Toshiba Semiconductor

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TPCA8010-H
2009-12-21
3
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
ID = 10 mA, VGS = −5 V
200
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
150
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 2.7 A
0.38
0.45
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.7 A
1.8
3.9
S
Input capacitance
Ciss
600
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
220
pF
Rise time
tr
8
Turn-ON time
ton
17
Fall time
tf
13
Switching time
Turn-OFF time
toff
Duty
≤ 1%, tw = 10 μs
70
ns
Total gate charge
(gate-source plus gate-drain)
Qg
10
Gate-source charge
Qgs
7.6
Gate-drain (“miller”) charge
Qgd
2.4
Gate switch charge
Qsw
VDD ≈ 160 V, VGS = 10 V,
ID = 5.5 A
3.7
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
11
A
Forward voltage (diode)
VDSF
IDR = 5.5 A, VGS = 0 V
−2.0
V
VDD ≈ 100 V
0 V
VGS
10 V
ID = 2.7 A
VOUT


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