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TPCS8008-H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8008-H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCS8008-H 2009-12-09 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 250 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −5 V 250 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 200 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.8 A ⎯ 0.48 0.58 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.8 A 0.8 1.8 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ pF Reverse transfer capacitance Crss ⎯ 20 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 220 ⎯ pF Rise time tr ⎯ 35 ⎯ Turn-on time ton ⎯ 95 ⎯ Fall time tf ⎯ 20 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 120 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ nC Gate-source charge Qgs ⎯ 7.5 ⎯ nC Gate-drain (“Miller”) charge Qgd ⎯ 2.5 ⎯ nC Gate switch charge Qsw VDD ≈ 200V, VGS = 10 V, ID = 1.7 A ⎯ 3.3 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current (pulse) (Note 1) IDRP ⎯ ⎯ ⎯ 6.8 A Forward voltage (diode) VDSF IDR = 1.7 A, VGS = 0 V ⎯ ⎯ −2.0 V VDD ≈ 125 V 0 V VGS 10 V ID = 0.8 A VOUT |
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