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RJK0389DPA-00-J53 Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # RJK0389DPA-00-J53
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0389DPA-00-J53 Datasheet(HTML) 7 Page - Renesas Technology Corp

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RJK0389DPA
Preliminary
REJ03G1722-0410 Rev.4.10
Page 7 of 10
May 13, 2010
• MOS2 and Schottky Barrier Diode
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source On State Resistance
vs. Drain Current
20
16
12
8
4
0
2
468
10
20
16
12
8
4
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
Pulse Test
10
3
1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 10 A
5 A
100
30
VGS = 4.5 V
10 V
2.5 V
2.7 V
10 V
Pulse Test
2 A
Case Temperature
Tc (°C)
Power vs. Temperature Derating
20
15
10
5
0
50
100
150
200
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
0.1
1
10
100
10
100
1000
1
0.1
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
4.5 V
3.0 V
2.9 V
1 ms
10
ms


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