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RJK0389DPA-00-J53 Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # RJK0389DPA-00-J53
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0389DPA-00-J53 Datasheet(HTML) 8 Page - Renesas Technology Corp

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RJK0389DPA
Preliminary
REJ03G1722-0410 Rev.4.10
Page 8 of 10
May 13, 2010
Case Temperature
Tc
(°C)
Static Drain to Source On State Resistance
vs. Temperature
50
40
30
20
10
–25
0
25
50
75
100 125
150
0
ID = 2 A, 5 A, 10 A
VGS = 4.5 V
10 V
Pulse Test
2 A, 5 A, 10 A
Channel Temperature Tch (
°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
16
12
8
4
25
50
75
100
125
150
0
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0, –5 V
10 V
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
010
30
20
10000
3000
1000
300
100
30
10
Gate Charge
Qg (nc)
Dynamic Input Characteristics
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
50
40
30
20
10
0
20
16
12
8
4
816
24
32
40
0
0
ID = 20 A
VGS
VDS
VDD = 25 V
10 V
VDD = 25 V
10 V


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