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RJK0389DPA-00-J53 Datasheet(PDF) 8 Page - Renesas Technology Corp |
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RJK0389DPA-00-J53 Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 11 page RJK0389DPA Preliminary REJ03G1722-0410 Rev.4.10 Page 8 of 10 May 13, 2010 Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature 50 40 30 20 10 –25 0 25 50 75 100 125 150 0 ID = 2 A, 5 A, 10 A VGS = 4.5 V 10 V Pulse Test 2 A, 5 A, 10 A Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 20 16 12 8 4 25 50 75 100 125 150 0 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Pulse Test 5 V VGS = 0, –5 V 10 V Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 30 20 10000 3000 1000 300 100 30 10 Gate Charge Qg (nc) Dynamic Input Characteristics Crss Coss Ciss VGS = 0 f = 1 MHz 50 40 30 20 10 0 20 16 12 8 4 816 24 32 40 0 0 ID = 20 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V |
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