RJK0379DPA datasheet(2/7 Pages) RENESAS

Part #	RJK0379DPA

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK0379DPA

Preliminary

REJ03G1826-0210 Rev.2.10

Page 2 of 6

May 13, 2010

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V(BR)DSS

30

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

0.1

A

VGS = 20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

m A

VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, ID = 1 mA

RDS(on)

—

1.8

2.3

m



ID = 25 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

2.4

3.4

m



ID = 25 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

110

—

S

ID = 25 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

5150

—

pF

Output capacitance

Coss

—

1080

—

pF

Reverse transfer capacitance

Crss

—

500

—

pF

VDS = 10 V, VGS = 0,

f = 1 MHz

Gate Resistance

Rg

—

1.2

—



Total gate charge

Qg

—

37

—

nC

Gate to source charge

Qgs

—

13.8

—

nC

Gate to drain charge

Qgd

—

10.7

—

nC

VDD = 10 V, VGS = 4.5 V,

ID = 50 A

Turn-on delay time

td(on)

—

16

—

ns

Rise time

tr

—

17.5

—

ns

Turn-off delay time

td(off)

—

72

—

ns

Fall time

tf

—

14

—

ns

VGS = 10 V, ID = 25 A,

VDD  10 V, RL = 0.4 ,

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.39

—

V

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

35

—

ns

IF = 50 A, VGS = 0

diF/ dt = 100 A/ s

Notes: 4. Pulse test

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