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RJK0208DPA-00-J53 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0208DPA-00-J53
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0208DPA-00-J53 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK0208DPA
Preliminary
REJ03G1924-0200 Rev.2.00
Page 3 of 6
Apr 27, 2010
Main Characteristics
100
80
60
40
20
0
24
6
8
10
100
80
60
40
20
01
2
3
4
5
10
3
1
30
300
1
10
100
1000
3
160
120
80
40
0
4
8
12
16
20
10 A
100
30
10 V
2.7 V
3.1 V
10 V
4.5 V
5A
80
60
40
20
0
50
100
150
200
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
2.9 V
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by RDS(on)
1 ms
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 5 V
Pulse Test
Tc = 75°C
25°C
–25°C
Pulse Test
VGS = 2.5 V
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Pulse Test
VGS = 4.5 V
ID = 20 A
10
μs
100
μs


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