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AP2161DWG-7 Datasheet(PDF) 4 Page - Diodes Incorporated |
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AP2161DWG-7 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 18 page AP2161D/AP2171D 1A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE AP2161D/2171D Document number: DS32250 Rev. 1 - 2 4 of 18 www.diodes.com June 2010 © Diodes Incorporated Electrical Characteristics (TA = 25 oC, VIN = +5.0V, unless otherwise stated) Symbol Parameter Test Conditions Min Typ. Max Unit VUVLO Input UVLO 1.6 1.9 2.5 V ISHDN Input Shutdown Current Disabled, IOUT= 0 0.5 1 μA IQ Input Quiescent Current Enabled, IOUT= 0 45 70 μA ILEAK Input Leakage Current Disabled, OUT grounded 0.1 1 μA IREV Reverse Leakage Current Disabled, VIN= 0V, VOUT= 5V, IREV at VIN 0.1 1 μA RDS(ON) Switch on-resistance VIN = 5V, IOUT= 1A TA = 25°C SOT25, MSOP-8-EP, SO-8 95 115 m Ω DFN2018-6 90 110 -40 °C ≤ T A ≤ 85°C 140 VIN = 3.3V, IOUT= 1A TA = 25°C 120 140 -40 °C ≤ T A ≤ 85°C 170 ISHORT Short-Circuit Current Limit Enabled into short circuit, CL=22μF 1.2 A ILIMIT Over-Load Current Limit VIN= 5V, VOUT= 4.0V, CL=120μF,-40°C ≤ TA ≤85 °C 1.1 1.5 1.9 A ITrig Current limiting trigger threshold Output Current Slew rate (<100A/s) , CL=22μF 2.0 A VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input leakage VEN = 5V 1 μA TD(ON) Output turn-on delay time CL=1μF, Rload=10Ω 0.05 ms TR Output turn-on rise time CL=1μF, Rload=10Ω 0.6 1.5 ms TD(OFF) Output turn-off delay time CL=1μF, Rload=10Ω 0.05 ms TF Output turn-off fall time CL=1μF, Rload=10Ω 0.05 0.1 ms RFLG FLG output FET on-resistance IFLG =10mA 20 40 Ω TBlank FLG blanking time CIN=10uF, CL=22μF 4 7 15 ms RDIS Discharge resistance (Note 3) VIN = 5V, disabled, IOUT= 1mA 100 Ω TDIS Discharge Time CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V 0.6 ms TSHDN Thermal Shutdown Threshold Enabled, Rload=1kΩ 140 °C THYS Thermal Shutdown Hysteresis 25 °C θJA Thermal Resistance Junction-to- Ambient SOT25 (Note 4) 170 oC/W SO-8 (Note 4) 127 MSOP-8-EP (Note 5) 67 DFN2018-6 (Note 5) 70 Notes: 3. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path for the external storage capacitor. 4. Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout. 5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. |
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