BC549C datasheet(2/4 Pages) ONSEMI

Part #	BC549C

Description	Low Noise Transistors NPN Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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BC549C, BC550C

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

45

−

Vdc

Collector − Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

50

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

−

Vdc

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 30 V, IE = 0, TA = +125°C)

ICBO

−

15

5.0

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

15

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

hFE

100

420

270

500

−

800

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 10 mAdc, IB = see note 1)

(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)

VCE(sat)

−

0.075

0.3

0.25

0.6

Vdc

Base−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

VBE(sat)

−

1.1

−

Vdc

Base−Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

−

0.55

0.52

0.55

0.62

−

0.7

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

−

250

−

MHz

Collector−Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccbo

−

2.5

−

pF

Small−Signal Current Gain

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

hfe

450

600

900

−

Noise Figure

(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)

(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)

NF1

NF2

−

0.6

−

2.5

10

dB

1. IB is value for which IC = 11 mA at VCE = 1.0 V.

2. Pulse test = 300

ms − Duty cycle = 2%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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