BC549C datasheet(1/4 Pages) ONSEMI

Part #	BC549C

Description	Low Noise Transistors NPN Silicon

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Low Noise Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC549

BC550

Unit

Collector–Emitter Voltage

VCEO

30

45

Vdc

Collector–Base Voltage

VCBO

30

50

Vdc

Emitter–Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

BC549B,C

BC550B,C

V(BR)CEO

30

45

—

Vdc

Collector–Base Breakdown Voltage

(IC = 10 µAdc, IE = 0)

BC549B,C

BC550B,C

V(BR)CBO

30

50

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 30 V, IE = 0, TA = +125°C)

ICBO

—

15

5.0

nAdc

µAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

—

15

nAdc

February, 2001 – Rev. 1

1

Publication Order Number:

BC549B/D

BC549B,C

BC550B,C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER

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